Interconnect structures for integrated circuits

An integrated circuit having an interconnect structure comprising:

• a generally horizontal metallic conductor having a thickness and a width;
• and
• a generally vertical metallic conductor, the vertical metallic conductor at least partially penetrating into the horizontal metallic conductor to form a first interface;
• wherein the horizontal metallic conductor comprises a Titanium/Titanium Nitride/Aluminum alloy/Titanium stack, and the vertical metallic conductor comprises a Titanium/Titanium Nitride layer stack and Tungsten.

An integrated circuit having an interconnect structure, the integrated circuit comprising:

• a first conductive layer, of thickness t and linewidth w, having a first portion and a second portion;
• and
• a second conductive layer, having a thickness greater than t, coupled to the first conductive layer first portion at a first approximately interface and coupled to the first conductive layer second portion at a second interface;
• wherein the first and second interfaces are of approximately equal size;
• and
• wherein the size of the first interface significantly exceed 1/2 times .pi. times w.sup.2 to increase the electromigration lifetime of the first interface.

An interconnect structure comprising:

• a generally horizontal interconnect, of thickness t and linewidth w, having a first portion;
• and
• a generally vertical interconnect terminating the first conductive layer and in contact with the first conductive layer first portion at an approximately vertical interface;
• wherein the thickness t of the horizontal interconnect significantly exceeds the linewidth w of the horizontal interconnect.

An integrated circuit having an interconnect structure comprising:

• a first dielectric layer having a first surface, having a second surface opposing the first surface, and having an opening extending from the second surface to the first surface;
• a second dielectric layer having a first surface, having a second surface opposing the first surface, and having an opening extending from the second surface to the first surface;
• a first horizontal metallic interconnect including a first surface having a length and a width and disposed on the first dielectric first surface, and including a second surface extending approximately the width of the first horizontal metallic interconnect and having a first thickness;
• a second horizontal metallic interconnect including a first surface having a length and a width and disposed on the first dielectric second surface, including a second surface extending approximately the width of the second horizontal metallic interconnect and having a second thickness, including a third surface opposing the first surface and disposed on the second dielectric first surface, and including a fourth surface extending approximately the width of the second horizontal metallic interconnect and having a third thickness;
• a first vertical metallic interconnect having a body portion disposed within the opening of the first dielectric, a proximal portion having a surface in contact with the first horizontal metallic conductor second surface to form a first substantially vertical contact interface, and a distal portion having a surface in contact with the second horizontal metallic conductor second surface to form a second substantially vertical contact interface;
• and
• a second vertical metallic interconnect having a body portion disposed within the opening of the second dielectric and a proximal portion having a surface in contact with the second horizontal metallic conductor fourth surface to form a third substantially vertical contact interface;
• wherein the first and second horizontal metallic interconnects are comprised of respective Titanium/Titanium Nitride/Aluminum-Copper alloy/Titanium Nitride stacks, and wherein the first and second vertical metallic interconnects are comprised of respective Titanium/Titanium Nitride layer stacks and respective Tungsten.

An integrated circuit interconnect structure comprising:

• a first metallic line having a generally planar surface;
• a second metallic line having a generally planar surface;
• a metallic plug having a first end region coupled to the first line and a second end region coupled to the second line, wherein a first interface, disposed between the plug first end region and the first line, extends into the first line beyond the surface thereof, and a second interface, disposed between the plug second end region and the second line, extends into the second line beyond the surface thereof;
• a third metallic line having a generally planar surface;
• and
• a second metallic plug having a first end region coupled to the first line and a second end region coupled to the third line, wherein a first interface, disposed between the second plug first end region and the first line, extends in to the first line beyond the surface thereof, and a second interface, disposed between the second plug second end region and the third line, extends in the third line beyond the surface thereof;
• wherein the first, second, and third metallic lines are comprised of respective Titanium/Titanium Nitride/Aluminum-Copper alloy/titanium Nitride stacks, and the metallic plugs are comprised of respective Titanium/Titanium Nitride layer stacks and respective Tungsten.