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US 5,666,002 AGranted
Semiconductor device with wiring layer in tunnel in semiconductor substrate
AssigneeKabushiki Kaisha Toshiba
InventorsTadashi Yamamoto, Souichi Sugiura
Life of this patent
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Abstract
A transistor element is formed on the surface of a silicon substrate. A tunnel is formed in the silicon substrate at a position right under the transistor element. A contact hole is formed to extend from the surface of the silicon substrate to the contact hole. Silicon oxide films are respectively formed on the inner surfaces of the tunnel and the contact hole. A wiring layer is buried in the tunnel and the contact hole. The wiring layer is connected to a diffusion layer of the transistor element.
Claims24
A semiconductor device comprising:
- a semiconductor substrate;
- a semiconductor element formed on a surface of said semiconductor substrate;
- a tunnel formed in said semiconductor substrate at a position under said semiconductor element, said tunnel linearly extending in only one direction;
- a contact hole extending from the surface of said semiconductor substrate and reaching said tunnel;
- and
- a wiring layer buried in said tunnel and said contact hole.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a semiconductor element formed on a surface of said semiconductor substrate;
- a tunnel formed in said semiconductor substrate at a position under said semiconductor element, said tunnel linearly extending in only one direction;
- a contact hole extending from the surface of said semiconductor substrate and reaching said tunnel;
- an insulating layer formed on inner surfaces of said tunnel and said contact hole;
- and
- a wiring layer buried in said tunnel and said contact hole.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a field insulating film surrounding first and second element regions of said semiconductor substrate;
- a tunnel formed in said semiconductor substrate;
- a contact hole formed between said first and second element regions such that a bottom portion of said contact hole reaches said tunnel;
- an insulating layer formed on inner surfaces of said tunnel and said contact hole;
- a wiring layer buried in said tunnel and said contact hole;
- and
- semiconductor elements respectively formed in the first and second element regions,
- wherein a first MOS transistor having a first conductivity type is formed in the first element region, and a second MOS transistor having a second conductivity type is formed in the second element region, said first and second MOS transistors having drains adjacent to said contact hole and electrically connected to said wiring layer via a conductive film formed on said semiconductor substrate.
6 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a field insulating film surrounding an element region of said semiconductor substrate;
- a tunnel formed in said semiconductor substrate;
- a contact hole formed in the element region such that a bottom portion of said contact hole reaches said tunnel;
- an insulating layer formed on inner surfaces of said tunnel and said contact hole;
- a wiring layer buried in said tunnel and said contact hole;
- and
- a memory cell formed in the element region and connected to said wiring layer, wherein said tunnel extends in a linear direction, and said wiring layer serves as a bit line of said memory cell.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a field insulating film surrounding first and second element regions of said semiconductor substrate;
- a tunnel formed in said semiconductor substrate;
- a contact hole formed between said first and second element regions such that a bottom portion of said contact hole reaches said tunnel;
- an insulating layer formed on inner surfaces of said tunnel and said contact hole;
- a wiring layer buried in said tunnel and said contact hole;
- and
- semiconductor elements respectively formed in the first and second element regions,
- wherein a first MOS transistor having a first conductivity type is formed in the first element region, and a second MOS transistor having a second conductivity type is formed in the second element region, said first and second MOS transistors having drains adjacent to said contact hole and electrically connected to said wiring layer at a side wall of said contact hole via conductive film formed on said wiring layer.
6 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a field insulating film surrounding an element region of said semiconductor substrate;
- a tunnel formed in said semiconductor substrate;
- a contact hole formed in the element region such that a bottom portion of said contact hole reaches said tunnel;
- an insulating layer formed on inner surfaces of said tunnel and said contact hole;
- a wiring layer buried in said tunnel and said contact hole;
- and
- a memory cell formed in the element region and connected to said wiring layer,
- wherein a drain of said memory cell is adjacent to said contact hole and electrically connected to said wiring layer at a side wall of said contact hole via a conductive film formed on said wiring layer.
6 more elements
A semiconductor device comprising:
- a first semiconductor substrate;
- a field insulating film formed on a first surface of said first semiconductor substrate, said field insulating film surrounding an element region of said first semiconductor substrate and being formed at least in a peripheral portion of said first semiconductor substrate;
- a semiconductor element formed in said element region;
- a second semiconductor substrate bonded to a second surface of said first semiconductor substrate;
- a tunnel formed in said second semiconductor substrate, one end of said tunnel being located in a peripheral portion of said second semiconductor substrate, a peripheral portion of said first semiconductor substrate and the peripheral portion of said second semiconductor substrate overlapping each other;
- a contact hole formed in the peripheral portion of said first semiconductor substrate and in said field insulating film, and formed in the peripheral portion of said second semiconductor substrate, said contact hole reaching said tunnel from a surface of said field insulating film;
- an insulating layer formed on inner surfaces of said contact hole and said tunnel;
- a first wiring layer buried in said tunnel and said contact hole;
- and
- a second wiring layer formed on the field insulating film and connecting said semiconductor element with said first wiring layer.
7 more elements
Dependencies are inferred from the claim text.