Metal-semiconductor diode and process for preparing metal-semiconductor diodes
AssigneeDaimler-Benz Aktiengesellschaft
InventorHans Brugger
Life of this patent
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Abstract
It is suggested for a metal-semiconductor diode that the depletion zone layer be grown epitaxially from deformed In.sub.x Ga.sub.1-x As with an indium content x increasing in the direction of the metal contact and/or that a diode area be delimited by surrounding insulation regions in a planar design consisting of a flat layer sequence and that the metal contact be provided on the surface of the layer sequence. Corresponding advantageous manufacturing processes are described.
Claims15
A metal-semiconductor diode, comprising:
- a depletion zone from deformed In.sub.x Ga.sub.1-x As,;
- a metal contact on said depletion zone, said depletion zone having an indium content (x) which continuously increases in the direction of the metal contact.
A metal-semiconductor diode in planar arrangement, comprising:
- a high-doped lead layer;
- a depletion zone layer deposited on said lead layer;
- insulation regions of semiconductor material surrounding the diode and extending through said lead layer and said depletion zone layer;
- a metal contact arranged on a surface of said depletion layer;
- and
- openings with connection contacts extending through the depletion zone layer into the lead layer.
A process for preparing a metal-semiconductor diode with a depletion zone from deformed In.sub.x Ga.sub.1-x As, and a metal contact on said depletion zone, said depletion zone having an indium content (x) which continuously increases in the direction of the metal contact, the process comprising the steps of:
- growing said In.sub.x Ga.sub.1-x As depletion zone layer on a high-doped lead layer in a uniform epitaxial step with the indium content increasing over the course of time.
A process for preparing a metal-semiconductor diode with a high-doped lead layer, a depletion zone layer on said lead layer, insulation regions surrounding the diode and extending through said lead layer and said depletion zone layer, a metal contact arranged on a surface of said depletion layer, and openings with connection contacts extending through the depletion zone layer into the lead layer, the process comprising the steps of:
- growing said depletion zone layer on a high-doped said lead layer;
- forming insulation regions surrounding an intended diode area through said depletion zone layer and said lead layer by means of an implantation process;
- forming said diode-metal contact on said depletion zone layer in said intended diode area and preparing leads via said insulation regions;
- and
- preparing channels for contacting said lead layer through said depletion zone layer in said intended diode area.
Dependencies are inferred from the claim text.