Light-emitting diode
AssigneeShowa Denko K.K.
InventorsKoichi Hasegawa, Isao Kabe
Life of this patent
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Abstract
A light-emitting diode comprises a first layer of Si-doped N-type Ga.sub.1-x Al.sub.x As, a second layer of Si-doped P-type Ga.sub.1-y Al.sub.y As and a third layer of P-type Ga.sub.1-z Al.sub.z As, in that order, in which the first and third layers have a higher Al concentration than the second layer, an Al concentration in the second layer decreases going from a first layer side to a third layer side, an Al concentration in a portion of the second layer in contact with the third layer is higher than an Al concentration value in a portion of the second layer in contact with the first layer minus 0.06, the second layer is formed to a thickness of approximately 8 .mu.m to 50 .mu.m, and light emission is via the first layer.
Claims7
A light-emitting diode comprising a first layer of Si-doped N-type Ga.sub.1-x Al.sub.x As, a second layer of Si-doped P-type Ga.sub.1-y Al.sub.y As and a third layer of P-type Ga.sub.1-z Al.sub.z As, in that order, in which the first and third layers have a higher Al concentration than the second layer, an Al concentration in the second layer decreases going from a first layer side to a third layer side, an Al concentration in a portion of the second layer in contact with the third layer is higher than an Al concentration value in a portion of the second layer in contact with the first layer minus 0.06 or less, the second layer is formed to a thickness of approximately 8 .mu.m or more to approximately 50 .mu.m or less, and light emission is via the first layer.
Dependencies are inferred from the claim text.