Electronic device with a spin-on glass dielectric layer
AssigneesAT&T Global Information Solutions Company, Hyundai Electronics America, Symbios Logic Inc.
InventorDerryl D. J. Allman
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Abstract
There is provided electronic devices with dielectric layers obtained from boron-oxide doped, spin-on glass formulations which form glassy layers with high oxygen resistance. Suitable electronic devices include integrated circuits. With high oxygen resistance, the glassy layer formed maintains its integrity in subsequent processing. Also provided is a method for preparing boron-oxide doped, spin-on glass formulations with a high carbon content having a silane adhesion promoter and boron-dopant incorporated therein.
Claims8
An electronic device having a dielectric layer, comprised of a boron-oxide substituted polyorganosiloxane polymer having greater than 1 wt. % boron-oxide, at least 30 atomic wt. % carbon and a silane adhesion promoter incorporated therein.
An electronic device having a dielectric interlayer comprised of a boron-oxide substituted polyorganosiloxane polymer having at least 2 wt. % boron-oxide and at least 15 atomic wt. % carbon, having a thickness of from 0.1 to 10 microns and having a silane adhesion promoter incorporated therein.
Dependencies are inferred from the claim text.