Method of forming a dielectric layer structure
AssigneeMotorola, Inc.
InventorMatthias Passlack
Life of this patent
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Abstract
A method of forming a stable semiconductor device on an at least partially completed semiconductor device including a supporting semiconductor structure of III-V material having a clean and atomically ordered surface to be coated with a dielectric layer structure. A relatively thin layer of Ga.sub.2 O.sub.3 is deposited on the surface by evaporation using a high purity single crystal of material including Ga.sub.2 O.sub.3 and a second oxide, such as MgO or Gd.sub.2 O.sub.3. A second layer of material with low bulk trap density relative to the Ga.sub.2 O.sub.3 is deposited on the layer of Ga.sub.2 O.sub.3 to complete the dielectric layer structure.
Claims23
A method of forming a dielectric layer structure on a supporting semiconductor structure comprising the steps of:
- providing a supporting semiconductor structure of III-V material having a surface to be coated with the dielectric layer structure;
- depositing a layer of Ga.sub.2 O.sub.3 on the surface of the supporting structure;
- and
- depositing a layer of material with low bulk trap density relative to the Ga.sub.2 O.sub.3 on the layer of Ga.sub.2 O.sub.3 to form the dielectric layer structure.
A method of forming a dielectric layer structure on a supporting semiconductor structure comprising the steps of:
- providing a supporting semiconductor structure of III-V material having a surface to be coated with a dielectric layer;
- depositing a layer of Ga.sub.2 O.sub.3, having a sublimation temperature, on the surface of the supporting semiconductor structure by evaporation using a high purity single crystal of material including Ga.sub.2 O.sub.3 and a second oxide with a melting point greater than 700.degree. C. above the sublimation temperature of the Ga.sub.2 O.sub.3 ;
- and
- depositing a layer of material with low bulk trap density relative to the Ga.sub.2 O.sub.3 on the layer of Ga.sub.2 O.sub.3 to form the dielectric layer structure.
A method of forming a stable semiconductor device comprising the steps of:
- providing an at least partially completed semiconductor device including a supporting semiconductor structure of III-V material having a surface to be coated with a dielectric layer structure;
- depositing a layer of Ga.sub.2 O.sub.3, having a sublimation temperature, on the surface of the supporting structure by evaporation using a high purity single crystal of material including Ga.sub.2 O.sub.3 and a second oxide with a melting point greater than 700.degree. C. above the sublimation temperature of the Ga.sub.2 O.sub.3 ;
- and
- depositing a layer of material with low bulk trap density relative to the Ga.sub.2 O.sub.3 on the layer of Ga.sub.2 O.sub.3 to form the dielectric layer structure.
Dependencies are inferred from the claim text.