A method for manufacturing a semiconductor device, comprising the steps of:
- positioning insulative members on a surface of a semiconductor chip on which electrodes are formed, said insulative members having guide holes corresponding to the electrodes, and guiding lead terminals into the guide holes, respectively, said lead terminals being separated from one another;
- and
- soaking the semiconductor chip in a solution of electrolytic plating together with the insulative members while the electrodes and the lead terminals contact each other to form metal plating layers for electrically connecting the lead terminals and the electrodes.