Method of manufacturing a semiconductor device using reticles

A method of manufacturing a semiconductor device, the method comprising the steps of:

• depositing a first metal layer on a first insulating film on a wafer,
• forming a first mark on a scribe line of said wafer by photolithographically patterning and etching said first metal layer using a first reticle;
• depositing a second insulating film on said first insulating film and said first mark;
• forming an opening, above said first mark, as a second mark by photolithographically patterning and etching said second insulating film using a second reticle;
• depositing a second metal layer in said opening and on said second insulating film;
• forming a deposit completely covering said first mark located in said opening by photolithographically patterning and etching said second metal layer using a third reticle, said deposit also covering a portion of said second insulating film completely surrounding said opening;
• and
• forming a third mark on said scribe line of said wafer at a position remote from said deposit by photolithographically patterning and etching said second metal layer using said third reticle.