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US 5,665,643 AGranted
Manufacture of planarized insulating layer
AssigneeFujitsu Limited
InventorDaeshik Shin
Life of this patent
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Abstract
A method of manufacturing a semiconductor device having an insulating film includes the steps of: preparing a substrate having a step on a surface thereof; coating polysilazane on the surface of the substrate; and curing the polysilazane in a non-oxidizing atmosphere. Polysilazane coated on a substrate can be cured without corrosion and destruction of underlie wiring patterns.
Claims22
A method of manufacturing a semiconductor device comprising the steps of:
- preparing a semiconductor substrate having a stepped surface thereupon;
- coating polysilazane on the stepped surface of the substrate;
- and
- curing said polysilazane in a non-oxidizing atmosphere to form an interlevel insulating film having a planarized surface,
- wherein said polysilazane has a chemical formula ##STR2## where n is several thousands.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a field oxide film on a surface of a silicon substrate, the silicon substrate having a stepped surface the field oxide film defining active regions;
- forming insulating gate structure on the surface of the substrate, the gate structure including gate electrode on the active region and gate wiring on the field oxide film;
- depositing a first silicon oxide film on the substrate;
- reflowing said first silicon oxide film;
- forming a first wiring including adjacent lines with a space therebetween of no more than 1 .mu.m on the reflowed silicon oxide film;
- forming a second silicon oxide film on the first wiring and the first silicon oxide film;
- coating polysilazane of a degree of polymerization of several thousands formed by opening a ring of cyclopolysilazane, on the second silicon oxide film;
- and
- curing said polysilazane in a non-oxidizing atmosphere to form an interlevel insulating film having a planarized surface.
6 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- opening a ring of cyclopolysilazane to provide polysilazane of a chain structure or a ladder structure;
- preparing a semiconductor substrate having a step on a surface thereof;
- coating said polysilazane on the surface of the substrate;
- and
- curing said polysilazane in a non-oxidizing atmosphere, at a temperature in a range of 350.degree. to 550.degree. C. to form an interlevel insulating film having a planarized surface.
2 more elements
Dependencies are inferred from the claim text.