Process for forming a semiconductor device having field isolation

A process for forming a semiconductor device comprising the steps of:

• forming a first trench and a second trench within a substrate to define a first component region, wherein:
• the first component region has a first side and a second side opposite the first side;
• the first trench lies adjacent to the first side of the first component region;
• second component region lies adjacent to the first trench on a side of the first trench opposite the first component region;
• and
• the second trench lies adjacent to the second side of the first component region and defines a plurality of mesas;
• and
• forming a fill layer within the first and second trenches to form a first field isolation region and a second field isolation region, wherein:
• the first field isolation region lies at least partly within the first trench;
• the second field isolation region lies at least partly within the second trench and includes the plurality of mesas;
• and
• the fill layer laterally surrounds the plurality of mesas;
• and
• removing a portion of the fill layer to form a first field isolation region within the first trench and a second field isolation region within the second trench, wherein the first field isolation region includes a remaining portion of the fill layer but no mesa, and the second field isolation region includes a remaining portion of the fill layer and the plurality of mesas.

A process for forming a semiconductor device comprising the steps of:

• forming a trench within the substrate, wherein the trench defines a mesa;
• forming a fill layer within the trench;
• removing a portion of the fill layer to form a first field isolation region having a planar surface, wherein the first field isolation region includes the fill layer and the mesa;
• and
• forming a conductor over the first field isolation region, wherein the conductor lies within 500 angstroms of the mesa within the first field isolation region.

A process for forming a semiconductor device comprising the steps of:

• forming a plurality of first trenches within the substrate, wherein:
• the plurality of first trenches defines a plurality of mesas that, from a plan view, form a plurality of symbols;
• the semiconductor device includes an identifier selected from a part number and a mask set;
• and
• the identifier includes the plurality of symbols;
• forming a fill layer within the plurality of first trenches;
• and
• removing a portion of the fill layer to form a first field isolation region having a planar surface, wherein the first field isolation region includes a remaining portion of the fill layer and the plurality of mesas.