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AssigneeInternational Business Machines Corporation
InventorsKarl Paul Ludwig Muller, Wesley C. Natzle
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Isotropic deposition of a selectively etchable material in an opening in a body of material followed by isotropic deposition of an etch resistant material forms a mask for anisotropic etching of the selectively etchable material at potentially sub-lithographic dimensions to form potentially sub-lithographic features within a trench. This process can be exploited to form a folded trench capacitor in which a trench is formed with one or more upstanding and possibly hollow features therein; effectively multiplying the surface area and or allowing reduced trench depth for a given charge storage capacity or a combination thereof. Further surface treatments such as deposition of hemispherical grain silicon can be used to further enhance the effective area of the trench. Isolation structures of sub-lithographic dimensions can also be formed by depositing appropriate materials within the trenches formed in accordance with the mask.
A method of forming a feature in a first body of material including the steps of
A method of forming a feature in a first body of material including the steps of
A method of forming a feature in a first body of material including the steps of
A method of forming a feature in a first body of material including the steps of
Dependencies are inferred from the claim text.