Method of forming insulating films, capacitances, and semiconductor devices
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
Insulating metal oxide or nitride films are deposited by RF magnetron sputtering. During sputtering, the atmospheric gas comprises an oxygen or nitride compound gas and an inert gas. The proportion of the inert gas is decreased to 25 atom % or lower. By this sputtering condition, adverse effects caused by the inert gas is suppressed so that the quality of the insulating film is substantially improved.
Claims13
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM (dynamic random access memory), said method comprising the steps of:
- preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein;
- forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor;
- forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising an oxide of a metal;
- and
- forming an upper electrode of said capacitor on said dielectric layer,
- wherein said sputtering gas contains an oxygen containing gas at a concentration of 75% or higher.
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of:
- preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein;
- forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor;
- forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a ferroelectric material, and
- forming an upper electrode of said capacitor on said dielectric layer
- wherein said sputtering gas contains an oxygen containing gas at a concentration of 75% or higher.
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of:
- preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein;
- forming a LOCOS (field insulating film) on or within said semiconductor substrate for isolating said transistor;
- forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor;
- forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a ferroelectric material, and
- forming an upper electrode of said capacitor on said dielectric layer,
- wherein said capacitor is located over at least a portion of said LOCOS,
- wherein said sputtering gas contains an oxygen containing gas at a concentration of 75% or higher.
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of:
- preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein;
- forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor;
- forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a ferroelectric material;
- and
- forming an upper electrode of said capacitor on said dielectric layer,
- wherein said sputtering gas contains an oxygen containing oxygen at a concentration of 75% or higher,
- wherein said capacitor is located over at least a portion of a gate electrode of said transistor.
A method of forming a nitride dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of:
- preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein;
- forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor;
- forming said nitride dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a nitride, and
- forming an upper electrode of said capacitor on said dielectric layer,
- wherein said sputtering gas contains nitrogen at a concentration of 75% or higher.
Dependencies are inferred from the claim text.