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US 5,659,201 AGranted
High conductivity interconnection line
AssigneeAdvanced Micro Devices, Inc.
InventorDonald L. Wollesen
Life of this patent
Estimating the term…
Abstract
High conductivity interconnection lines are formed of high conductivity material, such as copper, employing barrier layers impervious to the diffusion of copper atoms. Higher operating speeds are obtained with conductive interconnection lines, preferably copper interconnection lines, formed above the wire bonding layer.
Claims26
A semiconductor device, comprising:
- a semiconductor substrate;
- a plurality of levels of dielectric layers and aluminum conductive layers formed on the semiconductor substrate, wherein an upper aluminum conductive layer constitutes a wire bonding layer for external connection thereto;
- and
- a high conductivity interconnection line formed at a level above the aluminum wire bonding layer with a dielectric layer therebetween, wherein the high conductivity interconnection line consists essentially of a conductive metal selected from the group consisting of copper, copper-base alloys, gold, gold-base alloys, silver, silver-base alloys and superconducting materials.
1 more element
A semiconductor device having an integrated circuit on a die, which semiconductor device comprises:
- a semiconductor substrate;
- a dielectric layer formed thereon;
- one or more aluminum interconnect layers;
- and
- a high conductivity metal interconnection line formed on the dielectric layer above the aluminum interconnect layer(s);
- wherein the high conductivity metal interconnection line consists essentially of a metal selected from the group consisting of copper, copper-base alloys, gold, gold-base alloys, silver, silver-base alloys and superconducting materials.
3 more elements
Dependencies are inferred from the claim text.