Semiconductor device with bump structure

A semiconductor device comprising:

• a semiconductor element provided on a semiconductor chip;
• a metallic film formed on a surface of said semiconductor chip;
• an insulating film formed on said metallic film and having a contact hole for exposing a part of said metallic film;
• a barrier metal formed on the metallic film within said contact hole;
• a bonding layer made of titanium (Ti) formed on said barrier metal;
• a bump growing film made of copper (Cu) formed on said bonding layer;
• and
• a columnar metallic bump formed on said bump growing film.

A semiconductor device comprising:

• a semiconductor element provided on a semiconductor chip;
• a metallic film formed on said semiconductor element;
• a metallic bump structure for making contact with said semiconductor element and a wiring provided on an external substrate, provided on a part of said metallic film;
• and
• interposed layers interposed between said metallic film and said bump structure, including:
• a barrier metal layer formed on said metallic film;
• a bonding layer made of Ti and formed on said barrier metal layer;
• and
• a bump growing layer made of Cu and formed on said bonding layer, wherein said metallic bump structure is formed on said bump growing layer.