Method for forming three dimensional processor using transferred thin film circuits
AssigneeKopin Corporation
InventorsPaul M. Zavracky, Matthew Zavracky, Duy-Phach Vu, Brenda Dingle
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Abstract
A multi-layered structure is fabricated in which a microprocessor is configured in different layers and interconnected vertically through insulating layers which separate each circuit layer of the structure. Each circuit layer can be fabricated in a separate wafer or thin film material and then transferred onto the layered structure and interconnected.
Claims63
A method of fabricating a data processor comprising:
- forming a first circuit of a data processor in a first layer of semiconductor material;
- forming a second circuit of a data processor in a second layer of semiconductor material;
- bonding the second layer to the first layer with a bonding layer;
- forming an opening in the bonding layer for an interconnect;
- and
- connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
A method of fabricating a data processor comprising:
- forming a first circuit of a data processor in a first layer of semiconductor material;
- forming a light emitting device in a second layer of semiconductor material;
- bonding the second layer to the first layer with a bonding layer;
- forming an opening in the bonding layer for an interconnect;
- and
- connecting the first data processor circuit with the light emitting device with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the light emitting device.
A method of fabricating a data processor comprising:
- forming a first circuit of a data processor in a first layer of semiconductor material;
- forming a circuit routing layer and bonding the circuit routing layer to the first circuit layer;
- forming a second circuit of a data processor in a second layer of semiconductor material;
- bonding the second layer to the circuit routing layer with a bonding layer;
- forming an opening in the bonding layer for an interconnect;
- and
- connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening and along the circuit routing layer such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
A method of fabricating a data processor comprising:
- forming a first circuit of a data processor in a first layer of semiconductor material;
- forming a second circuit of a data processor in a second layer of semiconductor material;
- bonding the second layer to the first layer with a bonding layer;
- curing said bonding layer;
- forming a hole through the bonding layer;
- and
- applying a metallization layer for electrically connecting the first circuit and the second circuit, the metallization layer flowing from the second layer through the hole to the first layer.
A method of fabricating a data processor, comprising:
- forming a first circuit having a first data processor circuit in a first silicon layer of a first silicon-on-insulator structure;
- forming a second circuit having a second data processor circuit in a second silicon layer of a second silicon-on-insulator structure;
- bonding the second layer to the first layer with a bonding layer;
- forming openings in the bonding layer for interconnects;
- and thereafter
- connecting the first data processor circuit with the second data processor circuit with interconnects extending through the openings in the bonding layer to enable communication of data processor signals between the first data processor circuit and the second data processor circuit.
A method of fabricating a data processor, comprising:
- forming a first circuit of a data processor in a first layer of semiconductor material;
- forming a second circuit of a data processor in a second layer of semiconductor material on a substrate;
- bonding the second layer to the first layer with a bonding layer;
- removing the substrate from the second layer;
- forming an opening in the bonding layer for an interconnect;
- and
- connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
A method of fabricating a data processor, comprising:
- forming a first circuit of a data processor in a first layer of semiconductor material;
- forming a second circuit of a data processor in a second layer of semiconductor material on a substrate;
- transferring the second layer to a transfer body;
- removing the substrate from the second layer;
- bonding the second layer to the first layer with a bonding layer;
- removing the transfer body from the second layer;
- forming an opening in the bonding layer for an interconnect;
- and
- connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
Dependencies are inferred from the claim text.