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US 5,653,807 AGranted
Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorTodd E. Crumbaker
Life of this patent
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Abstract
An epitaxial film deposition system has a low vacuum venturi pump for initially partially purging the system of toxic gases, and a high vacuum turbo-molecular pump to further sharply reduce the pressure to maximize toxic gas purging along with the detection of any slight leaks of toxic gases in the system. A source gas mixing manifold has an array of gas feed lines layed out in a rectangular array for forwarding the gases to the reactor furnace, wherein each feed line has an equal path length between each run valve of the mixing manifold and the reactor to minimize switching transient variations.
Claims13
Apparatus for depositing films comprising:
- (a) a reactor for depositing films on semiconductor bodies therein by exposing said bodies to source gases;
- (b) a plurality of source gas cylinders;
- (c) a source gas mixing manifold having a plurality of pairs of vent and run valves each pair being joined together at a junction point;
- (d) a plurality of gas feed lines, each coupled between a source gas cylinder and an associated junction point of said source gas mixing manifold via an associated purge panel of a bank of purge panels;
- (e) reactor gas supply means coupled to said mixing manifold for supplying said reactor with a plurality of source gases;
- (f) exhaust means for exhausting spent gases from said reactor;
- (g) first high vacuum pump means coupled between said exhaust means and said reactor for purging said reactor;
- (h) second high vacuum pump means coupled to said exhaust means;
- (i) a common vent line coupled between the vent valves of the mixing manifold and said second high vacuum pump means;
- (j) venturi vent pump means coupled to said purge panels via a common venturi line;
- (l) a control valve coupled between the venturi vent line and the common vent line;
- (m) means for operating said venturi pump means while maintaining said control valve closed, thereby to partially reduce pressure in said purge panels;
- and
- (n) means for thereafter operating said second high vacuum pump means while maintaining said control valve open, thereby to fully purge said purging panels and said common vent line by virtue of high vacuum.
11 more elements
Apparatus for depositing films comprising:
- (a) a reactor for depositing films on semiconductor bodies therein by exposing said bodies to source gases;
- (b) a plurality of source gas cylinders;
- (c) a source gas mixing manifold;
- (d) a plurality of gas feed lines, each coupled between a source gas cylinder and said source gas mixing manifold via an associated purge panel of a bank of purge panels;
- (e) reactor gas supply means coupled between said mixing manifold and said reactor for supplying said reactor with a plurality of source gases;
- (f) exhaust means for exhausting spent gases from said reactor;
- (g) a venturi vent pump means coupled to the purge panels via venting conduit means for initially purging said purge panels by producing a moderate vacuum therein;
- and
- (h) high vacuum pump means, operative after the operation of said venturi vent pump means, for purging said reactor, said purge panels, and said mixing manifold by producing a very high vacuum in said venting conduit means.
6 more elements
Apparatus for depositing films comprising:
- (a) a reactor for depositing epitaxial films on semiconductor bodies therein by exposing said bodies to source gases;
- (b) a plurality of source gas cylinders;
- (c) a source gas mixing manifold;
- (d) a plurality of gas feed lines, each coupled between a source gas cylinder and said source gas mixing manifold;
- (e) reactor gas supply conduit means coupled between said source gas mixing manifold and said reactor for supplying said reactor with a plurality of source gases;
- and
- (f) wherein the reactor gas supply conduit means includes a common run line having an exit portion at said reactor and having an entrance portion;
- wherein said source gas mixing manifold includes an array of mixing manifold gas lines, each coupled between an associated run valve of the source gas mixing manifold and the entrance portion of said common run line, and wherein said mixing manifold gas lines form a rectangular grid pattern and have an equal path length between each run valve and the entrance portion of said common run line.
5 more elements
Dependencies are inferred from the claim text.