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US 5,652,762 AGranted
Semiconductor laser device and method for fabricating the same and strained quantum well crystal and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsNobuyuki Otsuka, Masahiro Kito, Masato Ishino, Yasushi Matsui
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Abstract
The semiconductor laser device of the invention includes: a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure. In the semiconductor laser device, at least one of the well layer and the barrier layer is composed of a mixed crystal where an atomic ordering is generated.
Claims4
A semiconductor laser device comprising:
- a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure,
- wherein the well layer and the barrier layer are composed of an InGaAsP mixed crystal having respectively different energy band gaps from each other, and
- wherein, in at least one of the well layer and the barrier layer, an atomic ordering is generated so that a lattice plane of a first compound and a lattice plane of a second compound are alternately stacked one by one to constitute the layer.
A strained quantum well crystal comprising:
- a semiconductor crystal;
- and an InGaAsP crystal having a lattice constant different from a lattice constant of the semiconductor crystal,
- wherein an atomic ordering is generated in the InGaAsP crystal so that a lattice plane of a first compound and a lattice plane of a second compound are alternately stacked one by one to constitute the InGaAsP crystal.
Dependencies are inferred from the claim text.