Plasma processing apparatus and plasma processing method
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKenji Itoh
Life of this patent
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Abstract
In a plasma processing apparatus including a cylindrical electrode and plural electrodes which are disposed to face the cylindrical electrode in a circumferential direction of the cylindrical electrode, the plural electrodes are designed to have the prescribed curvature corresponding to that of the surface of the cylindrical electrode. The interval between the cylindrical electrode and the plural electrodes may be fixed or stepwise varied in the circumferential direction. The area of each of the plural electrodes may be different from that of the other electrodes.
Claims17
A method of forming a protective carbon coating on a substrate having a magnetic layer thereon in a plasma processing apparatus having a cylindrical electrode and plural electrodes which are disposed in a circumferential direction of said cylindrical electrode, said method comprising the step of:
- supplying a reactive gas into the space between said cylindrical electrode and said plural electrodes;
- applying a voltage between said cylindrical electrode and said plural electrodes to convert said reactive gas into plasma;
- feeding said substrate between said cylindrical electrode and said plural electrodes in the circumferential direction;
- and
- forming a protective carbon coating on said substrate,
- said carbon film has a hardness which is smaller at portion close to said substrate and larger at a portion close to an outer surface thereof.
A method of forming a protective film comprising the steps of:
- preparing a cylindrical electrode and a plurality of counter electrodes adjacent to said cylindrical electrode in a reaction chamber;
- moving a substrate having a magnetic layer thereon between said cylindrical electrode and said plurality of counter electrodes wherein said plurality of counter electrodes are arranged in a direction in which said substrate moves;
- introducing a carbon containing gas into said reaction chamber;
- applying a high frequency voltage independently to said plurality of counter electrodes to convert said carbon containing gas into a plasma;
- depositing a carbon film by using said plasma on said substrate with said substrate being proceeded,
- wherein said high frequency voltage is increased in said direction along which said substrate moves.
A method of forming a protective film comprising the steps of:
- preparing a cylindrical electrode and a plurality of counter electrodes adjacent to said cylindrical electrode in a reaction chamber;
- moving a substrate having a magnetic layer thereon between said cylindrical electrode and said plurality of counter electrodes wherein said plurality of counter electrodes are arranged in a direction in which said substrate moves;
- introducing a carbon containing gas into said reaction chamber;
- applying a high frequency voltage to said plurality of counter electrodes to convert said carbon containing gas into a plasma;
- depositing a carbon film by using said plasma on said substrate with said substrate being proceeded,
- wherein a gap between said cylindrical electrode and said plurality of counter electrodes is decreased in said direction along which said substrate moves.
The method of forming a protective film comprising the steps of:
- preparing a cylindrical electrode and a plurality of counter electrodes adjacent to said cylindrical electrode in a reaction chamber;
- moving a substrate having a magnetic layer thereon between said cylindrical electrode and said plurality of counter electrodes wherein said plurality of counter electrodes are arranged in a direction in which said substrate moves;
- introducing a carbon containing gas into said reaction chamber;
- applying a high frequency voltage to said plurality of counter electrodes from a common power source to convert said containing gas into a plasma;
- depositing a carbon film by using said plasma on said substrate with said substrate being proceeded,
- wherein a matching condition for each of said plurality of counter electrodes is controlled so that an intensity of said plasma increases in said direction along which said substrate moves.
A method of forming a protective film comprising the steps of:
- preparing a cylindrical electrode and a plurality of counter electrodes adjacent to said cylindrical electrode in a reaction chamber;
- moving a substrate having a magnetic layer thereon between said cylindrical electrode and said plurality of counter electrodes wherein said plurality of counter electrodes are arranged in a direction in which said substrate moves;
- introducing a carbon containing gas into said reaction chamber;
- applying a high frequency voltage from a common power source to said plurality of counter electrodes to convert said carbon containing gas into a plasma;
- depositing a carbon film by using said plasma on said substrate with said substrate being proceeded,
- wherein an area of said plurality of counter electrodes is decreased in said direction along which said substrate moves.
Dependencies are inferred from the claim text.