Sidewall spacer using an overhang
AssigneeInternational Business Machines Corporation
InventorsJohn Edward Cronin, Patricia Ellen Marmillion, Anthony Palagonia, Bernadette Ann Pierson, Dennis Arthur Schmidt
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Abstract
Improved film spacers for the sidewalls within semiconductor structures are disclosed. The spacers are made of non-conformal, organic materials, such as polyimides, acrylates, methacrylates, and various photoresist compositions. They are formed on the sidewalls by a process which involves the formation of overhang structures. The film spacers may be used for a variety of applications, such as sidewall imaging, control of dopant diffusion in an FET, formation of borderless contacts, and the manufacture of a resistor from an FET.
Claims14
A method for forming a non-conformal film spacer on the sidewall of a trench within a semiconductor structure, comprising the steps of:
- (a) providing a semiconductor structure having the trench therein;
- (b) forming at least one overhang on the uppermost edge of the sidewall surface, said overhang protruding laterally from the sidewall surface over a portion of the bottom surface of the trench;
- (c) applying a removable film of non-conformal material to the trench;
- and then
- (d) removing the portion of the non-conformal material which does not lie underneath the overhang, so that a film spacer of the non-conformal material remains only underneath the overhang.
Dependencies are inferred from the claim text.