Method and apparatus for plasma treatment of a surface
AssigneeBoard of Trustees operating Michigan State University
InventorsJie Zhang, Jes Asmussen
Life of this patent
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Abstract
A radiofrequency wave apparatus and method which provides a relatively high concentration of reactive species from a plasma for the treatment of a surface particularly of a substrate (31) with a complex geometry in a holder (62) which masks a portion of the substrate. The radiofrequency waves are preferably microwaves or UHF waves. The apparatus and method is particularly useful for rapid plasma assisted chemical vapor deposition of diamond on a portion of the substrate, particularly on surfaces of objects with complex geometries such as a drill (60) or a seal ring (64).
Claims9
In a plasma generating apparatus for treating a substrate with a plasma including a plasma source employing a radiofrequency, including UHF or microwave, wave coupler means which is metallic and optionally including a static magnetic field around the plasma which aids in coupling radiofrequency energy at electron cyclotron resonance and aids in confining ions in the plasma in an electrically insulated chamber means in the coupler means, mounted in closely spaced and sealed relationship to an area of the coupler means with an opening from the chamber means at one end;
- waveguide means for coupling the radiofrequency waves to the coupler means;
- and a stage means which forms part of the coupler means and provides for mounting a substrate adjacent the plasma, the improvement which comprises:
- (a) a conductive plate with at least one orifice mounted at the opening from the chamber between the stage means and the chamber;
- (b) an inlet and an outlet for gas flow through the orifice and through the plasma which is in a region between the orifice and the stage means and then removal from the region;
- and
- (c) tuning means for positioning the radiofrequency waves between the orifice and the stage means.
Dependencies are inferred from the claim text.