Self-powered device
AssigneeLucent Technologies Inc.
InventorSteven J. Hillenius
Life of this patent
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Abstract
The invention provides a self-powered device having at least one substrate, at least one radioactive power source formed over the substrate, and integrated circuits formed over the substrate. The radioactive power source includes a first active layer of a first conductivity type, a second active layer of a second conductivity type. The first and second active layers form a depletion layer. A tritium containing layer is provided which supplies beta particles that penetrates the depletion layer generating electron-hole pairs. The electron-hole pairs are swept by the electric field in the depletion layer producing an electric current.
Claims13
A radio isotopic power source, comprising:
- a first arrangement of semiconductor materials including a first N+ portion having a first N+ surface area, a first P- portion in contact with said first N+ portion to form a first PN junction and a first P+ portion in contact with said first P- portion;
- a second arrangement of semiconductor materials including a second P+ portion having a P+ surface area that is electrically connected to the first N+ surface area, a second N+ portion having a second N+ surface area, an N portion in contact with said second P+ portion to form a second PN junction and with said second N+ portion and a second P- portion in contact with said second N portion;
- and
- a radioactive element disposed in a vicinity of said first N+ surface area and said P+ surface area.
A radio isotopic power source, comprising:
- a first arrangement of semiconductor materials including a first P+ portion having a first P+ surface area, a first N- portion in contact with said first P+ portion to form a first PN junction and a first N+ portion in contact with said first N- portion;
- a second arrangement of semiconductor materials including a second N+ portion having an N+ surface area that is electrically connected to the first P+ surface area, a second P+ portion having a second P+ surface area, a P portion in contact with said second N+ portion to form a second PN junction and with said second P+ portion and a second N- portion in contact with said second P portion;
- and
- a radioactive element disposed in a vicinity of said first P+ surface area and said N+ surface area.
Dependencies are inferred from the claim text.