Thin film transistor, organic electroluminescence display device and manufacturing method of the same

A thin film transistor formed in an organic electroluminescence display device having a substrate and a plurality of organic electroluminescence elements formed on said substrate, said transistor being used to drive one of said electroluminescence elements, said transistor comprising:

• an active layer of semiconductor material, formed on said substrate, a source region and a drain region being formed in said active layer;
• a source electrode of aluminum material electrically coupled to said source region formed in said active layer;
• a drain electrode of aluminum material electrically coupled to said drain region formed in said active layer;
• an insulation layer formed on said active layer;
• a gate electrode formed on said insulation layer;
• a first barrier metal layer of titanium inserted between said source electrode and said source region of said active layer;
• and
• a second barrier metal layer of titanium, inserted between said drain electrode and said drain region of said active layer.

An organic electroluminescence display device having a substrate, a plurality of organic electroluminescence elements formed on said substrate and a plurality of thin film transistors formed on said substrate, said transistors being connected to said respective electroluminescence elements for controlling current applied to said respective elements, each of said transistors comprising:

• an active layer of semiconductor material, formed on said substrate, a source region and a drain region being formed in said active layer;
• a source electrode of aluminum material electrically coupled to said source region formed in said active layer;
• a drain electrode of aluminum material electrically coupled to said drain region formed in said active layer;
• an insulation layer formed on said active layer;
• a gate electrode formed on said insulation layer;
• a first barrier metal layer of titanium nitride containing equal to or less than 50 atm % of nitrogen, inserted between said source electrode and said source region of said active layer;
• and
• a second barrier metal layer of titanium nitride containing equal to or less than 50 atm % of nitrogen, inserted between said drain electrode and said drain region of said active layer.

An organic electroluminescence display device having a substrate, a plurality of organic electroluminescence elements formed on said substrate and a plurality of thin film transistors formed on said substrate, said transistors being connected to said respective electroluminescence elements for controlling current applied to said respective elements, each of said transistors comprising:

• an active layer of semiconductor material, formed on said substrate, a source region and a drain region being formed in said active layer;
• a source electrode of aluminum material electrically coupled to said source region formed in said active layer;
• a drain electrode of aluminum material electrically coupled to said drain region formed in said active layer;
• an insulation layer formed on said active layer;
• a gate electrode formed on said insulation layer;
• a first barrier metal layer of titanium inserted between said source electrode and said source region of said active layer;
• and
• a second barrier metal layer of titanium inserted between said drain electrode and said drain region of said active layer.

An organic electroluminescence display device of active matrix type having a substrate, a plurality of organic electroluminescence elements formed on said substrate and a plurality of first and second thin film transistors formed on said substrate, said first transistors being connected to said respective electroluminescence elements for controlling current applied to said respective elements, said second transistors being connected to said respective first transistors for switching said respective first transistors, each of said first and second transistors comprising:

• an active layer of semiconductor material, formed on said substrate, a source region and a drain region being formed in said active layer;
• a source electrode of aluminum material electrically coupled to said source region formed in said active layer;
• a drain electrode of aluminum material electrically coupled to said drain region formed in said active layer;
• an insulation layer formed on said active layer;
• a gate electrode formed on said insulation layer;
• a first barrier metal layer of titanium nitride containing equal to or less than 50 atm % of nitrogen, inserted between said source electrode and said source region of said active layer;
• and
• a second barrier metal layer of titanium nitride containing equal to or less than 50 atm % of nitrogen, inserted between said drain electrode and said drain region of said active layer.

An organic electroluminescence display device of active matrix type having a substrate, a plurality of organic electroluminescence elements formed on said substrate and a plurality of first and second thin film transistors formed on said substrate, said first transistors being connected to said respective electroluminescence elements for controlling current applied to said respective elements, said second transistors being connected to said respective first transistors for switching said respective first transistors, each of said first and second transistors comprising:

• an active layer of semiconductor material, formed on said substrate a source region and a drain region being formed in said active layer;
• a source electrode of aluminum material electrically coupled to said source region formed in said active layer;
• a drain electrode of aluminum material electrically coupled to said drain region formed in said active layer;
• an insulation layer formed on said active layer;
• a gate electrode formed on said insulation layer;
• a first barrier metal layer of titanium inserted between said source electrode and said source region of said active layer;
• and
• a second barrier metal layer of titanium inserted between said drain electrode and said drain region of said active layer.