Short wavelength VCSEL
AssigneeMotorola, Inc.
InventorsJamal Ramdani, Michael S. Lebby, Piotr Grodzinski
Life of this patent
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Abstract
A short wavelength vertical cavity surface emitting laser (101) is provided. A substrate (102) having a surface (103), wherein the substrate (102) includes gallium arsenide phosphide is formed. A first stack of mirrors (106) overlying the first surface (103) of the substrate (102) is formed. A first cladding region (107) is formed overlying the first stack of mirrors (106). An active region (108) is formed overlying the first cladding region (107). A second cladding region (109) is formed overlying the active region (108). A second stack of mirrors (110) is formed overlying the second cladding region (109). A contact region (126) is formed overlying the second stack of mirrors (110).
Claims15
A short wavelength vertical cavity surface emitting laser comprising:
- a gallium arsenide phosphide substrate having a surface;
- a first stack of mirrors disposed on the surface of the gallium arsenide phosphide substrate;
- a first cladding region disposed on the first stack of mirrors;
- an active region disposed on the first cladding region;
- second cladding region disposed on the active region;
- a second stack of mirrors disposed on the second cladding region;
- and
- a contact region disposed on the second stack of mirrors.
A short wavelength vertical cavity surface emitting laser comprising:
- a semiconductor substrate having a first surface;
- a gallium arsenide phosphide layer deposited on the surface of the semiconductor substrate;
- a first stack of mirrors overlying the first surface of the semiconductor substrate;
- a first cladding region overlying the first stack of mirrors;
- an active region overlying the first cladding region;
- a second cladding region overlying the active region;
- a second stack of mirrors overlying the second cladding region;
- and
- a contact region overlying the second stack of mirrors.
A short wavelength vertical cavity surface emitting laser with a pseudo-substrate comprising:
- a semiconductor substrate having a first surface;
- a graded layer having a surface deposited on the surface of the semiconductor substrate;
- a pseudo-substrate deposited on the surface of the graded layer;
- a first stack of mirrors overlying the first surface of the semiconductor substrate;
- a first cladding region overlying the first stack of mirrors;
- an active region overlying the first cladding region;
- a second cladding region overlying the active region;
- a second stack of mirrors overlying the second cladding region;
- and
- a contact region overlying the second stack of mirrors.
Dependencies are inferred from the claim text.