In-situ temperature measurement using X-ray diffraction
AssigneesSiemens Aktiengesellschaft, International Business Machines Corporation, Kabushiki Kaisha Toshiba
InventorsKatsuya Okumura, James G. Ryan, Gregory B. Stephenson, Hans-Joerg Timme
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Abstract
A non-contact in-situ temperature measurement apparatus for a single crystal substrate such as a semiconductor wafer using X-ray diffraction. Utilizing the Bragg condition for X-ray diffraction, the lattice constant of the semiconductor substrate can be determined either by measuring the diffraction angle for a monochromatic X-ray (monochromatic approach) or by measuring the wavelength of an X-ray diffracted with a certain scattering angle (polychromatic approach). The lattice constant, as a well-known function of temperature, is finally converted into the temperature of the semiconductor substrate.
Claims13
A non-contact in-situ temperature measurement apparatus for a single crystal substrate such as a semiconductor wafer, comprising:
- a process chamber housing the semiconductor wafer;
- an incident X-ray source communicating with said wafer through a window in the process chamber;
- a diode array detector for receiving reflected X-rays from said wafer;
- and
- means responsive to said diode array detector for determining the lattice constant and temperature of the wafer based on received reflected X-rays.
A method of non-contact in-situ temperature measurement for a semiconductor wafer, the method comprising the steps of:
- providing a single crystal silicon wafer in a process chamber;
- providing an incident X-ray source communicating with said wafer in the process chamber;
- receiving reflected x-rays from said wafer;
- determining the lattice constant of the wafer based on the received reflected x-ray;
- and
- obtaining the temperature of the wafer as determined by the lattice constant.
Dependencies are inferred from the claim text.