Synchronous DRAM responsive to first and second clock signals
AssigneeTexas Instruments Incorporated
InventorsMasashi Hashimoto, Gene A. Frantz, John V. Moravec, Jean-Pierre Dolait
Life of this patent
Estimating the term…
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AssigneeTexas Instruments Incorporated
InventorsMasashi Hashimoto, Gene A. Frantz, John V. Moravec, Jean-Pierre Dolait
Estimating the term…
A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disabled. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).
A synchronous dynamic random access memory device comprising:
A process of using a dynamic random access memory device comprising:
Dependencies are inferred from the claim text.