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US 5,635,892 AGranted
High Q integrated inductor
AssigneeLucent Technologies Inc.
InventorsKirk B. Ashby, Iconomos A. Koullias
Life of this patent
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Abstract
An inductive structure is provided which displays an increased self-inductance and improved Q at high frequencies. The improvement resides in the disposition proximate the inductive structure an amount of magnetic material to increase mutual inductance between adjacent portions of the inductor's conductive path with current flow.
Claims19
An inductive structure formed within a substrate and integrable with a semiconductor integrated circuit, comprising:
- a) an electrical conductor providing a conductive path formed as a spiral planar pattern upon said substrate;
- and
- b) a core of magnetic material in proximity to and facing said planar pattern, such core defining an opening in a central region thereof.
A semiconductor integrated circuit comprising a substrate and an inductive structure, said inductive structure further comprising:
- a) an electrical conductor providing a conductive path in a form of a spiral planar pattern on said substrate;
- and
- b) a core of magnetic material in proximity to and facing said planar pattern, said core defining an opening in a central region thereof.
Dependencies are inferred from the claim text.