Surface treated structure for solder joint
AssigneeNippondenso Co., Ltd.
InventorsHisayoshi Fujikawa, Takeshi Ohwaki, Yasunori Taga, Osamu Takenaka, Kenji Kondo, Takao Yoneyama, Ichiharu Kondo
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AssigneeNippondenso Co., Ltd.
InventorsHisayoshi Fujikawa, Takeshi Ohwaki, Yasunori Taga, Osamu Takenaka, Kenji Kondo, Takao Yoneyama, Ichiharu Kondo
Estimating the term…
On a rear surface of a semiconductor (10), a contact layer (11), a diffusion preventing layer (12) and a solder joint layer (13) are formed, and this solder joint layer (13) is connected to a mount base (15) by a Pb-Sn solder layer (14). The contact layer (11) is formed of a rare earth metal, its silicide or a composite thereof, the diffusion preventing layer (12) is formed of a ferrous metal, and the solder joint layer (13) is formed of a Ni-Au alloy. By forming the diffusion preventing layer (12) using the ferrous metal, a diffusion of tin in a solder is prevented and by the solder joint layer (13) of the Ni-Au alloy, an excellent solder joint property can be maintained to reduce the number of laminated layers. Further, as a surface treated layer of at least one joint member, the Ni-Au alloy is used and by heating the semiconductor substrate via a solder foil in a reducing atmosphere a high airtightness is obtained.
A solder joint for connecting a ground metal to an electrode, comprising:
A semiconductor electrode structure for connecting a semiconductor substrate to a mount base using solder, comprising:
A solder joint for connecting a first element and a second element, comprising:
An electrode having an electrical contact adapted to provide a substantially flux-free solder connection, said electrical contact comprising:
A solder joint for connecting a ground metal to an electrode of a semiconductor device, said solder joint comprising:
Dependencies are inferred from the claim text.