US 5,635,762 A · Flip chip semiconductor device with dual purpose metallized ground conductor

Abstract

Semiconductor device for the microwave frequency ranges includes a semiconductor element of the "flip chip" type which comprises a semiconductor substrate having an active surface with at least one integrated circuit, a plurality of metal input-output pads and a circuit of transmission lines of the coplanar type having conductor strips and ground metallizations disposed on the active surface. A circuit of transmission lines of the microstrip type with conductor strips disposed on a surface opposed to the active surface and whose ground metallizations are formed by the ground metallization of the active surface. A base plate comprising an insulating substrate having a front surface with a plurality of metal input-output pads and ground metallizations patterned so as to be in electrical contact with the ground metallizations of the active surface of the semiconductor element when the latter is bonded to the base plate. The active surface of the semiconductor element is bonded to the front surface of the base plate with the corresponding input-output pads in electrical contact with one another.

Claims20

Dependent claims

A semiconductor device for microwave frequency ranges comprising:

a semiconductor element of the "flip chip" type which comprises a semiconductor substrate of which an active surface has at least one integrated circuit and a plurality of metal input-output pads,
a base plate which comprises an insulating substrate of which a front surface has a plurality of metal input-output pads,
and means for fixing the active surface of the semiconductor element on the front surface of the base plate with the corresponding input-output pads in electrical contact with one another, wherein
the semiconductor element comprises a circuit of transmission lines of the coplanar type having conductor strips and ground metallizations disposed on the active surface, and a circuit of transmission lines of the microstrip type having conductor strips disposed on a surface opposed to the active surface and whose ground metallizations comprise the ground metallizations of the active surface, and
the base plate comprises ground metallization on its front surface patterned so as to be in electrical contact with the ground metallizations of the active surface of the semiconductor element.

2 more elements

A high frequency semiconductor device comprising:

a semiconductor element which comprises a semiconductor substrate having an active surface and a non-active opposed surface with the active surface including at least one integrated circuit with at least one active element, a plurality of metal input-output pads, and at least one coplanar type transmission line comprising a conductor strip and at least one adjacent metal ground conductor, and at least one microstrip type transmission line comprising a conductor strip disposed on the non-active surface and opposed to the metal ground conductor on the active surface whereby the metal ground conductor functions as a ground plane for both the coplanar type transmission line and for the microstrip type transmission line, and
a base plate comprising an insulating substrate having a first surface juxtaposed to the active surface of the semiconductor element and having a plurality of metal input-output pads in electrical contact with corresponding metal input-output pads on the active surface of the semiconductor element and with a further metal ground conductor located so as to make electrical contact with the metal ground conductor on the active surface of the semiconductor element.

Dependencies are inferred from the claim text.

Flip chip semiconductor device with dual purpose metallized ground conductor

Life of this patent

Flip chip semiconductor device with dual purpose metallized ground conductor

Life of this patent

Abstract

Claims20