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US 5,635,752 AGranted
Semiconductor device having source and drain regions which include horizontally extending secondary defect layers
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYouji Kawasaki
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Abstract
A semiconductor device having shallow junction, in which carrier concentration will not be reduced, sheet resistance will not be increased, and contact characteristic at a surface will not become inferior, is provided. A gate electrode is provided on a semiconductor substrate. At a surface of semiconductor substrate, a pair of source/drain layers having top and bottom surfaces are provided on both sides of gate electrode. In source/drain layer, a secondary-defect layer which extends horizontally is formed between top surface and bottom surface.
Claims4
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate electrode provided on said semiconductor substrate;
- and
- a pair of substantially monocrystalline source/drain layers, having top and bottom surfaces, provided on both sides of said gate electrode at a surface of said semiconductor substrate, wherein
- a secondary-defect layer extends horizontally between said top and bottom surfaces in said source/drain layer.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate electrode provided on said semiconductor substrate;
- and
- a pair of substantially monocrystalline source/drain layers, having top and bottom surfaces, provided on both sides of said gate electrode at a surface of said semiconductor substrate, wherein
- a defect layer which is produced by heat treatment extends horizontally between said top and bottom surfaces in said source/drain layer.
2 more elements
Dependencies are inferred from the claim text.