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US 5,635,751 AGranted
High frequency transistor with reduced parasitic inductance
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYasukazu Ikeda, Hideo Matsumoto, Susumu Sakamoto
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Abstract
A semiconductor device includes a transistor mounted on a chip substrate. A metal sheet is disposed on the metallized electrode to which the base, for example, of the transistor is electrically connected. The base is electrically connected by a wire to the metal sheet. An MOS capacitor is disposed on the metal sheet and a through-hole beneath the metal sheet connects the metallized electrode directly to a metallized ground electrode disposed on the bottom surface of the substrate.
Claims1
A semiconductor device comprising:
- an electrically insulating substrate having opposed top and bottom surfaces;
- first, second, and third metallized electrodes disposed on the top surface of said substrate;
- a high frequency transistor having an emitter, a base, and a collector disposed on said first metallized electrode with the collector contacting said first metallized electrode;
- a metal sheet disposed on said second metallized electrode;
- a wire connecting said emitter of said transistor to said third metallized electrode;
- a wire connecting said base of said transistor to said metal sheet, thereby connecting said base to said second metallized electrode via said metal sheet;
- a through-hole extending through said substrate and having an inside surface;
- and
- a metallized ground electrode disposed on the bottom surface of said substrate and continuously extending on the inside surface of the through-hole, electrically connected to said second metallized electrode, said metal sheet covering and closing the through-hole, the through-hole being open at the bottom surface of said substrate.
6 more elements
Dependencies are inferred from the claim text.