High performance field effect transistor with lai region
AssigneeUnited Microelectronics Corp.
InventorGary Hong
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Abstract
A MOSFET transistor device with a gate formed over a lightly doped semiconductor substrate with a gate, and a source region and a drain region. V.sub.T1 ions are uniformly implanted into the surface of the substrate forming a V.sub.T region with substantially uniform doping in the upper portion of the substrate near the surface thereof. A gate oxide layer is formed on the substrate. A gate conductor is deposited over the gate oxide layer. A large angle implant is implanted into the region of the device over the source region. Then ions are implanted to form the source and drain regions which are self-aligned with the gate.
Claims16
A MOSFET device comprising:
- a substrate doped to a first conductivity type;
- a uniform V.sub.T region of a uniform depth, doped to a first conductivity type at a higher concentration than said substrate at a surface of said substrate;
- a gate oxide layer on said substrate;
- a gate over said gate oxide layer;
- source and drain regions self-aligned with said gate, said source and drain regions doped to a second conductivity type;
- and
- a large angle implant (LAI) region of the first conductivity type in said substrate extending from said source region to a point beneath said gate, a depth of the large angle implant region extending to a first depth adjacent said source and linearly decreasing to a surface of said substrate, said uniform V.sub.T region extending from said large angle implant region to said drain region.
Dependencies are inferred from the claim text.