Infrared solid-state image sensing apparatus

An infrared solid-state image sensing apparatus, comprising:

• a plurality of Schottky junction photoreceptors, which are disposed in a matrix pattern on a semiconductor substrate and which produce signal charges by photoelectrically converting infrared rays;
• and
• a charge reading section which adjoins said photoreceptors and which transfers the signal charges;
• said semiconductor substrate having an epitaxial layer thereon with the same conductivity type and impurity concentration as said semiconductor substrate, and said Schottky junction receptors being disposed on said epitaxial layer.

An infrared solid-state image sensing apparatus, comprising:

• a semiconductor substrate including a semiconductor of a first conducting type upon which an epitaxial layer of the first conducting type is disposed;
• a plurality of photoelectric converting sections arranged vertically and horizontally in a matrix pattern on said epitaxial layer;
• a plurality of vertical CCDs which have first buried channels of a second conducting type formed on said epitaxial layer and electrodes disposed thereon with insulating film between, and which are disposed adjacently to said photoelectric converting sections;
• and
• a horizontal CCD which has a second buried channel of the second conducting type formed on said epitaxial layer and an electrode disposed thereon with insulating film between, and which is disposed adjacently to one side of said vertical CCDs;
• said first and second buried channels being provided with a low-concentration region of uniform diffusion depth, and a surface of each first buried channel being provided with a high-concentration region of the second conducting type which has a higher concentration than that of a surface of the second buried channel.