Process for the characterization of an insulator and the corresponding electron microscope
AssigneesA L'Energie Atomique, Alcatel Cables
InventorsClaude Le Gressus, Claude Faure, Daniel Acroute, Jose Bezille, Hakim Janah, Gerard Moya, Guy Blaise
Life of this patent
Estimating the term…
Abstract
Process and apparatus for the characterization of an insulator (5) at breakdown with the aid of an electron microscope (1), in which the electron flow rate of the beam (3) is adjusted as a function of in particular backscattered, lost, secondary or absorbed electrons. An automatic controller (9) sensitive to certain sensors (10,12) is provided for this purpose. The electron flow rate is proportional to the voltage to be simulated in the insulator.
Claims5
Process for the characterization of an insulator (5) at breakdown using a scanning electron microscope (1) by which electrons of a beam (3) are injected at one location of the insulator, then the beam is moved in front of the insulator to measure the electric potential on the insulator at certain distances from the injection point, characterized in that the process involves a measurement (9) of the flow rates of electrons reflected by the insulator and an adjustment of the flow rate of the beam as a function of said flow rate of reflected electrons by an automatic controller in order to inject a given flow rate of electrons which are not reflected, in accordance with a given time function.
Scanning electron microscope (1), comprising an electron beam (3) projected onto a sample (5), having means (9) for measuring the flow rates of electrons reflected from the sample (5) and for adjusting the flow rate of the electron beam (3) as a function of said reflected flow rates in order to obtain a flow rate of electrons which are not reflected, characterized in that it is used for implanting electric charges on a fixed point of the sample in accordance with a given time function.
Dependencies are inferred from the claim text.