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US 5,635,427 AGranted
Method for assembling a pressure contact semiconductor device in a flat package
AssigneeFuji Electric Co., Ltd.
InventorYoshikazu Takahashi
Life of this patent
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AssigneeFuji Electric Co., Ltd.
InventorYoshikazu Takahashi
Estimating the term…
A module-type semiconductor device in which a plurality of IGBTs are incorporated in a package in such a way so as to provide a highly reliable pressure contact type semiconductor device having improved heat dissipation performance and small internal wiring inductance. A plurality of IGBTs are incorporated and arranged in a flat package with a hermetic structure consisting of common electrode plates exposed to top and bottom face sides, and an insulating outer frame interposed between the common electrodes plates and seal-joining those electrode plates. Contact terminal bodies which serve as both pressing members and heat radiators are interposed between the top-face-side common electrode plate and emitter electrodes of the respective opposing IGBT's. The emitter electrodes of the IGBTs and the common electrode, and the collector electrodes and the bottom-face-side common electrode, are directly brought in pressure contact with each other. Gate electrodes of the respective IGBTs are individually connected a gate wiring conductor located on an inner wall of an insulating outer frame by gate wire leads.
A method for assembling a pressure contact type semiconductor device in a flat package, said device including at least one horizontal electrode plate, at least a first semiconductor element and a second semiconductor element each having a plurality of layers of selected conductivity types, said first semiconductor element being different from said second semiconductor element in at least thicknesses thereof, means disposed between said electrode plate and said first and second semiconductor elements for contacting a first surface of said first semiconductor element opposite said electrode plate, and for contacting a second surface of said second semiconductor element opposite said electrode plate, the first and second surfaces being uneven with each other, thermoplastic conductive material which becomes malleable when heated above a particular temperature, surfaces of the first and second semiconductor elements opposite the respective first and second surfaces being bonded to said thermoplastic conductive material, said method comprising the steps of:
A method for assembling a pressure contact semiconductor device having first and second electrodes, said method comprising the steps of:
Dependencies are inferred from the claim text.