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US 5,635,407 AGranted
HGCDTE S-I-S two color infrared detector
AssigneeTexas Instruments Incorporated
InventorMichael W. Goodwin
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Abstract
A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.
Claims16
A method of forming a S-I-S two color infrared detector for detecting infrared radiation comprising the steps of:
- (a) providing a substrate of one of narrow bandgap or wide bandgap group II-VI semiconductor material doped with one of P-type or N-type element and having an exposed surface;
- (b) providing a molecular beam epitaxy to grow an electrically insulating layer on a portion of said surface;
- (c) providing a molecular beam epitaxy to grow a layer of narrow bandgap or wide bandgap group II-VI semiconductor material doped the same conductivity type as in said substrate on said electrically insulating layer, wherein the bandgap is different from said substrate;
- (d) forming a contact on each of said substrate and said layer of semiconductor material;
- and
- (e) disposing said wide bandgap material toward the direction of infrared radiation.
3 more elements
Dependencies are inferred from the claim text.