Alkylsulfonium salts and photoresist compositions containing the same
AssigneeNEC Corporation
InventorsKaichiro Nakano, Katsumi Maeda, Shigeyuki Iwasa, Etsuo Hasegawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeNEC Corporation
InventorsKaichiro Nakano, Katsumi Maeda, Shigeyuki Iwasa, Etsuo Hasegawa
Estimating the term…
A photoresist composition containing an alkylsulfonium salt compound represented by the following general formula (I): ##STR1## wherein R.sup.1 and R.sup.2 may be the same or different, each being a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, R.sup.3 is a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, a C.sub.5 to C.sub.7 2-oxocycloalkyl radical, or a linear or branched C.sub.3 to C.sub.8 2-oxoalkyl radical, and Y.sup.- represents a counter ion. The photoresist composition has high transparency to deep U.V. light having wavelengths of 220 nm or less and is capable of forming good fine patterns with high sensitivity, thus being useful as chemically amplified type resist which is exposed to the deep U.V. light from an ArF excimer laser.
A photoresist composition comprising
Dependencies are inferred from the claim text.