ZnS dielectric thin film and magnetic recording medium
AssigneeCasio Computer Co., Ltd.
InventorsToshio Kudo, Kunio Ichiji, Hiroyasu Jobetto
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Abstract
A zinc sulfide thin film containing oxygen or oxygen and nitrogen has a high refractive index, a high transmittance, and a high Kerr rotation angle enhancing performance. The zinc sulfide thin film is manufactured by sputtering a zinc sulfide sintered product containing oxygen in an argon gas atmosphere or a gas mixture atmosphere of argon gas and nitrogen gas.
Claims18
A dielectric thin film consisting essentially of 40 to 60 atomic % of Zn, 30 to 55 atomic % of S and oxygen and nitrogen in amounts defined as follows:
- 4 atomic % .ltoreq.oxygen .ltoreq.10 atomic % and
- 0 atomic % .ltoreq.nitrogen .ltoreq.7 atomic %.
A dielectric thin film consisting essentially of 40 to 60 atomic % of Zn, 30 to 55 atomic % of S and oxygen and nitrogen in amounts defined as follows:
- 7 atomic % .ltoreq.oxygen .ltoreq.30 atomic % and 5 atomic % .ltoreq.nitrogen .ltoreq.10 atomic %.
A dielectric film formed on a magnetic thin film, wherein the dielectric film consists essentially of 7 to 8.0 atomic % oxygen, 5.6 to 9.4 atomic % nitrogen and the remainder being ZnS.
A dielectric film formed on a transparent substrate with a magnetic thin film being formed on said dielectric film, wherein the dielectric film consists essentially of 7 to 8.0 atomic % oxygen, 5.6 to 9.4 atomic % nitrogen and the remainder being ZnS.
Dependencies are inferred from the claim text.