Low temperature plasma film deposition using dielectric chamber as source material
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorMonti E. Aklufi
Life of this patent
Estimating the term…
Abstract
A chemical vapor deposition system utilizes a microwave carrying dielectric member and inner chamber that are both placed within a reaction chamber. The inner chamber is used as a semiconductor source material, which in one particular embodiment is reactive with atomic hydrogen to form volatile hydrides or other gaseous compounds which react to form a desired film composition. The invention is useful for, but not limited to, submicron dimension integrated circuit fabrication, in particular, low temperature, cold wall reactor environments. By constraining the semiconductor production reaction between the inner chamber source material and an integrated circuit substrate, particulate formation is minimized, thereby reducing integrated circuit particle yield losses.
Claims16
A method using plasma to form a thin film on a surface within a reaction vessel, said method including the steps of:
- generating a plasma within said reaction vessel, said reaction vessel being of a material desired to be made a part of said thin film;
- and
- introducing a reactive gas into said reaction vessel, said reactive gas reacting with said reaction vessel to produce a reaction product that reacts at said surface so that said thin film results on said surface.
Dependencies are inferred from the claim text.