Fabrication method of field-emission cold cathode

Abstract

In a fabrication method of a field-emission cold cathode, a conductive material for an emitter is first deposited on a Si substrate and then dry etched to form a conical emitter. An insulating layer and a gate electrode are deposited in such a manner as to cover over the emitters, and the surfaces of the emitters are flattened with a resist. Then, the insulating layer and the gate electrode are opened by etching back to expose the end of the conical emitter. Ta can be used as the conductive material to be deposited on the Si substrate. Meanwhile, the insulating layer to be deposited on the emitter can be formed by anodic oxidation. Further, where the height of the surface of the gate electrode from the surface of the Si substrate is set equal to the height of the emitter, detection of the end point at the later etching back step is facilitated.

Dependencies are inferred from the claim text.