Back to results
US 5,634,974 AGranted
Method for forming hemispherical grained silicon
AssigneeMicron Technologies, Inc.
InventorsRonald A. Weimer, Randhir P. S. Thakur, Avishai Kepten, Michael Sendler
Life of this patent
Estimating the term…
Abstract
A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.
Claims74
A method of forming HSG, comprising the steps of:
- depositing a layer of starting material on a wafer using a method from the group consisting of plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition and rapid thermal chemical vapor deposition;
- seeding the layer of starting material with a species, the seeding step being performed under a first value for a process parameter;
- and
- annealing the seeded layer, the annealing step being performed under a second value for the process parameter, wherein the first and second values differ.
1 more element
A method of forming HSG, comprising the steps of:
- forming a layer of starting material on a wafer;
- irradiating the layer of starting material with an undiluted hydride, the irradiating step being performed under a first value for a process parameter;
- and
- annealing the seeded layer, the annealing step being performed under a second value for the process parameter, wherein the first and second values differ.
1 more element
A method of forming HSG, comprising the steps of:
- forming a layer of starting material on a wafer;
- seeding the layer of starting material with a species, the seeding step being performed under a first value for a process parameter;
- annealing the seeded layer, the annealing step being performed under a second value for the process parameter, the first and second values being different;
- and
- wherein the seeding step is performed in a first chamber, the annealing step is performed in a second chamber, and the first and second chambers are different chambers.
2 more elements
A method of forming HSG, comprising the steps of:
- forming a layer of starting material on a wafer;
- seeding the layer of starting material with a species, the seeding step being performed under a first value for a process parameter;
- annealing the seeded layer, the annealing step being performed under a second value for process parameter, wherein the first and second values differ;
- and
- forming a dielectric layer above the annealed layer.
2 more elements
Dependencies are inferred from the claim text.