Short wavelength VCSEL with Al-free active region
AssigneeMotorola, Inc.
InventorsJamal Ramdani, Michael S. Lebby, Hsing-Chung Lee
Life of this patent
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Abstract
A short wavelength VCSEL including a mirror stack positioned on a substrate, formed of a plurality of pairs of relatively high and low index of refraction layers a second mirror stack formed of a plurality of pairs of relatively high and low index of refraction layers, an active region sandwiched between the first stack and the second stack, the active region being formed of quantum well layers of GaAsP having barrier layers of GaInP sandwiched therebetween, the quantum well and barrier layers having substantially equal and opposite lattice mismatch.
Claims24
A short wavelength vertical cavity surface emitting laser comprising:
- a substrate;
- a first mirror stack of a first conductivity type positioned on the substrate, the first mirror stack being formed of a plurality of pairs of relatively high and low index of refraction layers;
- a second mirror stack of a second conductivity type, the second mirror stack being formed of a plurality of pairs of relatively high and low index of refraction layers;
- and
- an active region sandwiched between the first mirror stack and the second mirror stack, the active region being formed of a plurality of strained layers, alternate strained layers having equal and opposite crystallographic strain.
A short wavelength vertical cavity surface emitting laser comprising:
- a substrate;
- a first mirror stack of a first conductivity type positioned on the substrate, the first mirror stack being formed of a plurality of pairs of relatively high and low index of refraction layers;
- a second mirror stack of a second conductivity type, the second mirror stack being formed of a plurality of pairs of relatively high and low index of refraction layers;
- and
- an active region sandwiched between the first mirror stack and the second mirror stack, the active region being formed of a plurality of quantum well layers of GaAsP having barrier layers of GaInP sandwiched therebetween, the quantum well layers and the barrier layers having substantially equal and opposite lattice mismatch;
- the active region being sandwiched between a pair of confining layers.
Dependencies are inferred from the claim text.