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US 5,633,526 AGranted
Photodiode array and method for manufacturing the same
AssigneeRohm Co., Ltd.
InventorsKoichi Kudo, Yasuo Aki
Life of this patent
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Abstract
A photodiode array includes an insulating film; a semiconductor layer of a first conductivity type provided on the insulating film; a positive electrode and negative electrode formed on the semiconductor layer; and a plurality of pn junctions formed in series in the semiconductor layer between the positive and negative electrodes. The pn junctions are formed by a diffusion layer of a second conductivity type formed in the semiconductor layer and another diffusion layer of the first conductivity type formed in the diffusion layer, so as to terminate on the insulating film.
Claims5
A photodiode array comprising:
- an insulating film;
- a semiconductor layer of a first conductivity type provided on said insulating film;
- a positive electrode and negative electrode formed on said semiconductor layer;
- and
- a plurality of pn junctions formed in series in said semiconductor layer between said positive and negative electrodes;
- wherein said pn junctions are formed by a diffusion layer of a second conductivity type formed in said semiconductor layer and another diffusion layer of the first conductivity type formed in said diffusion layer, so as to terminate on said insulating film, and
- wherein said pn junctions are formed concentrically and connected in series between said positive and negative electrodes.
4 more elements
Dependencies are inferred from the claim text.