Lateral field effect transistor

Abstract

A lateral field effect transistor includes a semiconductor substrate, a source region further with source region stripes formed on the semiconductor substrate, and a drain region with drain region stripes formed on the semiconductor substrate and spaced laterally from the source region stripes. In addition, the lateral field effect transistor includes a source electrode having a first source electrode layer connected to the source region via a source contact and a second source electrode layer straddling the source region stripes and the drain region stripes. The first source electrode layer and the second source electrode layer are separated by an inter-layer insulation film and connected via a source connection hole formed through the inter-layer insulation film. In addition, the lateral field effect transistor includes a drain electrode having a first drain electrode layer connected to the drain region via a drain contact and a second drain electrode layer straddling the source region stripes and the drain region stripes. The first drain electrode layer and the second drain electrode layer are separated by an inter-layer insulation film and connected via a drain connection hole formed through the inter-layer insulation film. The lateral field effect transistor also includes a source pad disposed on the second source electrode layer and a drain pad disposed on the second drain electrode layer.

Dependencies are inferred from the claim text.