Low temperature ion-beam assisted deposition methods for realizing SiGe/Si heterostructure
AssigneeUniversity of Waterloo
InventorsC. R. Selvakumar, S. Mohajerzadeh, D. E. Brodie
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Abstract
A low temperature ion-beam assisted deposition process, comprising the steps of cleaning at least one substrate, subjecting the substrate to a vacuum of at least 2.times.10.sup.-4 Torr, heating the substrate to a temperature of at least 280.degree. C., and directing an ion beam at the substrate, wherein the ion beam comprises ion-associated gas molecules of Si or Ge, so as to grow a thin epitaxial film of Si or Ge on the substrate.
Claims20
A low temperature ion-beam deposition process, comprising the steps of:
- a) cleaning at least one substrate;
- b) subjecting said at least one substrate to a vacuum of at least 2.times.10.sup.-4 Torr;
- c) heating said at least one substrate to a temperature of 280.degree. C.;
- d) generating an ion beam at an energy of approximately 50 eV and a current of approximately 13 mA;
- and,
- e) directing an ion beam at an angle of approximately 20.degree. toward said at least one substrate, said ion beam comprising ion-dissociated gas molecules of an element, thereby growing a thin epitaxial film of germanium on said at least one substrate.
A low temperature ion-beam assisted deposition process, comprising the steps of:
- a) cleaning at least one substrate;
- b) subjecting said at least one substrate to a vacuum of approximately 1.times.10.sup.-7 Torr;
- c) heating said at least one substrate to a temperature of at least 200.degree. C.;
- d) in-situ ion bombardment of Si on said at least one substrate using Ar source gas for creating an ion beam, said ion beam being directed at an angle of 20.degree. to said at least one substrate, said ion bombardment being carried out at 150-170 eV and at an ion current of 14-16 mA;
- e) evaporating Ge on said at least one substrate simultaneously with said in-situ ion bombardment, thereby creating a SiGe/Si heterostructure;
- and
- f) co-evaporating a dopant for enhancing conductivity of said SiGe/Si heterostructure.
A low temperature ion-beam assisted deposition process, comprising the steps of:
- a) cleaning at least one substrate;
- b) subjecting said at least one substrate to a vacuum of approximately 1.times.10.sup.-7 Torr;
- c) heating said at least one substrate to a temperature of at least 200.degree. C.;
- d) in-situ ion bombardment of Si on said at least one substrate using Ar source gas for creating an ion beam, said ion beam being directed at an angle of 20.degree. to said at least one substrate, said ion bombardment being carried out at approximately 75 eV and an ion current of approximately 15 mA at a temperature of approximately 260.degree. C.;
- e) evaporating Ge on said at leas at one substrate simultaneously with said in-situ ion bombardment, thereby creating a SiGe/Si heterostructure;
- and
- f) co-evaporating a dopant for enhancing conductivity of said SiGe/Si heterostructure.
Dependencies are inferred from the claim text.