Method for epitaxially growing gallium nitride layers
AssigneeBoston University
InventorsTheodore D. Moustakas, Richard J. Molnar
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Abstract
An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitrogen source introduces activated nitrogen into the growth chamber and directs the activated nitrogen towards the substrate. The activated nitrogen comprises ionic nitrogen species and atomic nitrogen species. An external magnet and/or an exit aperture control the amount of atomic nitrogen species and ionic nitrogen species reaching the substrate.
Claims10
A method for epitaxially growing GaN layers comprising the steps of:
- providing a substrate within an epitaxial growth chamber;
- introducing molecular gallium into the growth chamber and directing the molecular gallium toward the substrate;
- introducing activated nitrogen from a nitrogen source into the growth chamber and directing the activated nitrogen toward the substrate, the activated nitrogen comprising ionic and neutral excited species, wherein the neutral excited species comprise atomic species and excited molecular species;
- controlling the ratio of the neutral excited species versus the ionic nitrogen species by varying the diameter of an exit aperture of the nitrogen source;
- and
- growing a GaN layer on the substrate.
The method of claim, 1 wherein the step of controlling comprises the step of biasing the substrate.
A method of making a light emitting device comprising the steps of:
- providing a substrate within an epitaxial growth chamber;
- introducing molecular gallium into the growth chamber and directing the molecular gallium toward the substrate;
- introducing activated nitrogen from a nitrogen source into the growth chamber and directing the activated nitrogen toward the substrate, the activated nitrogen comprising ionic and neutral excited species, wherein the neutral excited species comprise atomic species and excited molecular species;
- controlling the ratio of the neutral excited species versus the ionic nitrogen species by varying the diameter of an exit aperture of the nitrogen source;
- and
- growing a GaN layer on the substrate.
Dependencies are inferred from the claim text.