Method of manufacturing an image display device with reduced cell gap variation

A method of manufacturing an image display device, comprising the steps of:

• preparing a first substrate comprising a first substrate base and a second substrate base, said first substrate base prepared by forming a porous layer by anodizing single crystal silicon, forming an epitaxial layer of single crystal silicon on said porous layer, and forming a silicon oxide film on said epitaxial layer;
• preparing said second substrate base by forming on single crystal silicon a nitrogen-containing silicon film and then by forming a silicon oxide film on said nitrogen-containing silicon film;
• opposing said silicon oxide films of said first and second substrate bases and then heat coupling said first and second substrate bases to each other;
• removing at least said porous layer of said first substrate base;
• removing a portion of said epitaxial layer of said first base;
• forming a transistor in a remaining portion of said epitaxial layer;
• removing the single crystal silicon on said second substrate base;
• forming an opening in said silicon film containing nitrogen and said silicon oxide films of said second substrate base;
• providing an interconnection electrically connecting said transistor in at least said opening;
• forming on said nitrogen-containing silicon film an electrode layer electrically connected to said interconnection;
• forming an insulating layer on said electrode layer;
• preparing a second substrate having an electrode;
• orienting said first and second substrates such that the electrode on said second substrate is opposed to said electrode layer;
• and
• providing a liquid crystal layer between said first and second substrates.