Method for detecting wafer defects
AssigneeHyundai Electronics Industries Co., Ltd.
InventorSang M. Bae
Life of this patent
Estimating the term…
Abstract
A method for detecting wafer defects, comprising the steps of: forming dummy dies useful as an alignment mark at edge portions of a flat wafer, the edge portions having no pattern die; loading the wafer in a defect detecting apparatus; arranging the edge portions of the dummy dies; inspecting the wafer for defects to give data for the defects; and carrying out subsequent processes, according to which the detected defects are utilized to inspect for process defects at subsequent process steps, which makes it easy to monitor organic relations between the wafer defects and the process defects and between the process defects themselves.
Claims5
A method for detecting wafer defects, comprising the steps of:
- forming dummy dies at edge portions of a flat wafer containing no pattern die;
- performing a first step of inspecting defects on a surface of the wafer containing no pattern die;
- determining the coordinates of the defects, using said dummy dies as reference marks;
- performing a pattern die forming step;
- performing a second step of inspecting defects on a surface of the wafer after said die forming step;
- and
- comparing the defect coordinates and characteristics from said first and said second defect inspecting steps.
Dependencies are inferred from the claim text.