Method for analying an impurity on a semiconductor substrate

A method for analyzing an impurity on a semiconductor substrate, comprising the steps of:

• forming nitride films on one or more to-be-measured areas on a surface of a semiconductor substrate and trapping an impurity in the nitride film at each to-be-measured area of the semiconductor substrate;
• and wherein the to-be-measured areas are independent and distinct from each other;
• removing an impurity from other than the to-be-measured areas on the surface of the semiconductor substrate;
• dissolving the nitride films on the to-be-measured areas into droplets;
• collecting the droplets into a drop;
• and
• measuring an amount of impurity in the drop.

A method for analyzing an impurity on a semiconductor substrate, comprising the steps of:

• forming oxide films on one or more to-be-measured areas on a surface of a semiconductor substrate and trapping an impurity in the oxide film at each to-be-measured area of the semiconductor substrate, and wherein the to-be-measured areas are independent and distinct from each other;
• removing an impurity from other than the to-be-measured areas on the surface of the semiconductor substrate;
• dissolving the oxide films on the to-be-measured areas into droplets;
• collecting the droplets into a drop;
• measuring an amount of impurity in the drop;
• repeating said oxidizing step through said measuring step;
• and
• plotting the amount of impurity obtained at each measuring step in a depth direction of said semiconductor substrate.

A method for analyzing an impurity on a semiconductor substrate, comprising the steps of:

• forming nitride films on one or more to-be-measured areas on a surface of a semiconductor substrate and trapping an impurity in the nitride film at each to-be-measured area of the semiconductor substrate, and wherein the to-be-measured areas are independent and distinct from each other;
• removing an impurity from other than the to-be-measured areas on the surface of the semiconductor substrate,
• dissolving the nitride films on the to-be-measured areas into droplets;
• collecting the droplets into a drop;
• measuring an amount of impurity in the drop;
• repeating said nitride film depositing step through said measuring step;
• and
• plotting the amount of impurity obtained at each measuring step in a depth direction of said semiconductor substrate.

A method for analyzing an impurity on a semiconductor substrate having a first surface area and a second surface area, comprising the steps of:

• forming films on to-be-measured areas constituting the first surface area on a surface of the semiconductor substrate and trapping an impurity in the films at the first surface area of the semiconductor substrate, and wherein the to-be-measured areas are independent and distinct from each other;
• removing an impurity from the second surface area which are other than the first surface area on the surface of the semiconductor substrate;
• dissolving the films on the to-be-measured areas into droplets;
• collecting the droplets into a drop;
• and
• measuring an amount of impurity in the drop.

A method for analyzing an impurity on a semiconductor substrate having a first surface area and a second surface area, comprising the steps of:

• forming a film on a to-be-measured area constituting a first surface area on a surface of the semiconductor substrate and trapping an impurity in the film at the first surface area of the semiconductor substrate, and wherein the to-be-measured area are independent and distinct from each other;
• removing an impurity from the second surface area which is other than the first surface area on the surface of the semiconductor substrate;
• dissolving the film on the to-be-measured area into a droplet;
• collecting the droplet;
• and
• measuring an amount of impurity in the droplet.

A method for analyzing an impurity on a semiconductor substrate having first surface areas and second surface areas, comprising the steps of:

• forming films on to-be-measured areas constituting first surface areas on a surface of a semiconductor substrate and trapping an impurity in the film at each first surface area of the semiconductor substrate, and wherein the to-be-measured areas are independent and distinct from each other;
• removing an impurity from other than the first surface areas on the surface of the semiconductor substrate;
• dissolving the films on the to-be-measured areas into droplets;
• collecting the droplets into a drop;
• measuring an amount of impurity in the drop;
• repeating said film-forming step through said measuring step;
• and
• plotting the amount of impurity obtained at each measuring step in a depth direction of said semiconductor substrate.

A method for analyzing an impurity on a semiconductor substrate having a first surface area and a second surface area, comprising the steps of:

• forming an oxide film on to-be-measured areas constituting a first surface area on a surface of a semiconductor substrate and trapping an impurity in the oxide film at the first surface area of the semiconductor substrate, and wherein the to-be-measured areas are independent and distinct from each other;
• removing an impurity from a second surface area which is other than the first surface area on the surface of the semiconductor substrate;
• dissolving the oxide film on the to-be-measured area into a droplet;
• collecting the droplet;
• measuring an amount of impurity in the droplet;
• repeating said film forming step through said measuring step;
• and
• plotting the amount of impurity obtained at each measuring step in a depth direction of said semiconductor substrate.