Thin-film resistor and process for producing the same
AssigneeFuji Xerox Co., Ltd.
InventorsKazuo Baba, Yoshiyuki Shiratsuki, Kumiko Takahashi
Life of this patent
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Abstract
A thin-film resistor comprising a mixture of rhodium (Rh) oxide as a resistive material, and at least one element M selected from the group consisting of silicon (Si), lead (Pb), bismuth (Bi), zirconium (Zr), barium (Ba), aluminium (Al), boron (B), tin (Sn), and titanium (Ti), wherein M/Rh, or the ratio of the number of element M atoms to that of rhodium (Rh) atoms is in the range of 0.3 to 3.0. Thin-film resistor is formed from the process of preparing a solution of an organometallic material, coating the material on a substrate, drying and then firing the material at a peak temperature not less than 500.degree. C.
Claims4
A process of forming a thin-film resistor comprising rhodium (Rh) oxide as a resistive material, comprising the steps of:
- preparing a solution of ethyl cellulose, an organic solvent, an organometallic material containing rhodium (Rh), and an organometallic material containing at least one element selected from the group consisting of silicon (Si), lead (Pb), bismuth (Bi), zirconium (Zr), barium (Ba), aluminum (Al), boron (B), tin (Sn), and titanium (Ti), wherein the ratio of the total number of metal atoms other than rhodium (Rh) atom (M) to that of rhodium (Rh) atoms (M/Rh), is in the range of 0.3 to 3.0;
- applying onto a substrate a coating consisting essentially of said solution;
- drying said solution coated on said substrate;
- and
- firing, in air, said solution coated on said substrate after drying to form on said substrate a thin-film resistor formed of a homogeneous structure of oxides of said at least one element and rhodium oxide.
Dependencies are inferred from the claim text.