Pressure sensor method of fabrication

A method of fabricating a pressure sensor, the method comprising the steps of:

• providing a first substrate having two opposite surfaces, namely a first surface and a second surface;
• forming a V-groove in a portion of the first surface of the first substrate;
• attaching a second substrate to cover at least a portion of the first surface of the first substrate;
• forming a port extending from the second surface of the first substrate to the V-groove of the first surface of the first substrate;
• and
• disposing an oxide layer in the V-groove.

A method of fabricating a semiconductor component, the method comprising the steps of:

• providing a first substrate with a first surface and a second surface, the first surface opposite the second surface;
• anisotropically etching a groove in a portion of the first surface of the first substrate;
• bonding, in an ambient comprising oxygen, a second substrate to at least a portion of the first surface of the first substrate;
• fabricating semiconductor devices in the second substrate;
• and
• etching a port into the second surface of the first substrate, the port extending from the second surface to the groove.

A method of fabricating a semiconductor component, the method comprising the steps of:

• providing a first substrate with a first surface and a second surface, the first surface opposite the second surface;
• etching a V-groove in a portion of the first surface of the first substrate:
• bonding a second substrate to at least a portion of the first surface of the first substrate;
• fabricating semiconductor devices in the second substrate;
• etching a port into the second surface of the first substrate, the port extending from the second surface to the V-groove;
• forming an oxide layer in the V-groove;
• stopping the etching of the port at the oxide layer of the V-groove, wherein the etching of the port is anisotropic, and wherein the V-groove is wider than the port;
• and
• removing the oxide layer.

A method of fabricating a semiconductor component, the method comprising the steps of:

• providing a first semiconductor substrate having <111>
• crystal planes, a first surface, and a second surface opposite the first surface, the first surface having a <100>
• crystal plane orientation;
• masking a first portion of the first surface of the first semiconductor substrate;
• etching a second portion of the first surface of the first semiconductor substrate to form a V-groove in the second portion of the first surface, the etching stopping at the <111>
• crystal planes of the first semiconductor substrate;
• providing a second semiconductor substrate having a first side and a second side opposite the first side;
• disposing an oxide layer in the V-groove of the first surface of the first semiconductor substrate;
• attaching the first side of the second semiconductor substrate to the first semiconductor substrate;
• thinning the second semiconductor substrate from the second side;
• fabricating semiconductor devices in the second semiconductor substrate;
• masking a first portion of the second surface of the first semiconductor substrate while exposing a second portion of the second surface of the first semiconductor substrate, the second portion of the second surface located over at least a portion of the oxide layer in the V-groove;
• etching the second portion of the second surface of the first semiconductor substrate, the etching stopping at the oxide layer in the V-groove;
• and
• removing the oxide layer in the V-groove.